tm : turboswitch is a trademark of stmicroelectronics november 1999 - ed: 2d specific to "freewheel mode" opera- tions : freewheel or booster diode ultra-fast and soft recovery very low overall power losses in both the diode and the companion transistor high frequency operations surface mount device features and benefits the turboswitch is a very high performance series of ultra-fast high voltage power diodes from 600v to 1200v. turboswitch "a" family drastically cuts losses in both the diode and the associated switching igbt or mosfet in all "freewheel mode" operations and is particulary suitable and efficient in motor control freewheel applications and in booster diode applications in power factor control circuitries. packaged in smc surface mount envelope, these 600v devices are particularly intended for use on 240v domestic mains. description i f(av) 2a v rrm 600v t rr (typ) 20ns v f (max) 1.5v main products characteristics symbol parameter value unit v rrm repetitive peak reverse voltage 600 v v rsm non repetitive peak reverse voltage 600 v i f(rms) rms forward current 8 a i frm repetitive peak forward current (tp = 5 m s, f = 5khz) 50 a t j maximum operating junction temperature 125 c t stg storage temperature range - 65 to + 150 c absolute maximum ratings STTA206S ? turboswitch ? "a". ultra-fast high voltage diode ak smc 1/8
symbol parameter test conditions min typ max unit v f * forward voltage drop i f = 2a tj = 25c tj = 125c 1.1 1.75 1.5 v i r ** reverse leakage current v r = 0.8 x v rrm tj = 25c tj = 125c 400 20 1200 m a static electrical characteristics (see fig. 2) symbol parameter conditions value unit r th(j-i) junction to lead 21 c/w p 1 conduction power dissipation (see fig. 2) i f(av) = 1.5a d = 0.5 tlead= 72c 2.5 w p max total power dissipation pmax = p1 + p3 (p3 = 10% p1) tlead= 67c 2.8 w thermal and power data symbol parameter test conditions min typ max unit t rr reverse recovery time tj = 25c i f = 0.5 a i r = 1a irr = 0.25a i f = 1 a di f /dt =-50a/ m s v r = 30v 20 50 ns i rm maximum recovery current tj = 125c vr = 400v i f = 2a di f /dt = -16 a/ m s di f /dt = -50 a/ m s2.0 1.2 a s factor softness factor tj = 125c v r = 400v i f = 2a di f /dt = -50 a/ m stbd- dynamic electrical characteristics turn-off switching (see fig. 3) symbol parameter test conditions min typ max unit t fr forward recovery time tj = 25c i f = 1 a di f /dt = 8 a/ m s measured at, 1.1 v f max 500 ns v fp peak forward voltage 10 v turn-on switching (see fig.8) test pulses widths : * tp = 380 m s, duty cycle < 2% ** tp = 5 ms , duty cycle < 2% STTA206S 2/8
total losses due to the diode p = p1+ p2+ p3+ p4+ p5 watts switching losses in the diode off : p3 watts on : p4 watts (fig. 3 & 4) conduction losses in the diode p1 watts (fig. 2) switching losses in the transistor due to the diode p2 watts (fig. 3) reverse losses in the diode p2 watts (fig. 2) the turboswitch tm "a" is especially designed to provide the lowest overall power losses in any "freewheel mode" application (see fig. 1) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. the way of calculating the power losses is given below : application data diode: turboswitch "a" il load transistor switching t t f=1/t =t/t v r fig. 1 : "freewheel" mode STTA206S 3/8
i i f rd i r v r v to v f v fig. 2 : static characteristics conduction losses : p1 = v t0 x i f(av) + r d x i f 2 (rms) with v t0 = 1.15 v r d = 0.175 ohm (max values at 125c) reverse losses : p2 = v r x i r x (1 - d ) application data (contd) turn-on losses : (in the transistor, due to the diode) p5 = v r i rm 2 ( 3 + 2 s ) f 6 x di f dt + v r i rm i l ( s + 2 ) f 2 di f dt turn-off losses (in the diode) : p3 = v r i rm 2 s f 6 x di f dt p3 and p5 are suitable for power mosfet and igbt fig. 3 : turn-off characteristics di f /dt = v r /l di /dt r tb ta i rm v r i v t s=tb/ta trr = ta + tb rectifier operation v i il t transistor di /dt f di /dt r tb ta i rm vr diode i v t trr = ta + tb s = tb / ta STTA206S 4/8
application data (contd) i f v f v fp 1.1v f v f f di /dt 0 0t t i fmax tfr fig. 4 : turn-on characteristics turn-on losses : p4 = 0.4 (v fp - v f ) x i fmax x t fr x f ratings and characteristics curves are on going. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 p1(w) if(av) (a) d = 0.2 d = 0.5 d = 1 d = 0.05 d = 0.1 fig. 5: conduction losses versus average current. 0 20 40 60 80 100 120 140 160 180 200 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 p3(w) tj=125c f=20khz vr=400v il=2a il=4a dif/dt(a/us) fig. 6: switching off losses versus dif/dt. 0 20 40 60 80 100 120 140 160 180 200 0 0.05 0.1 0.15 0.2 dif/dt(a/us) p4(w) tj=125c f=100khz if=if(av) fig. 7: switching on losses versus dif/dt. 0 20 40 60 80 100 120 140 160 180 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 tj=125c f=20khz vr=400v il=2a il=4a p5(w) dif/dt(a/us) fig. 8: switching losses in transistor due to the diode. STTA206S 5/8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1e-2 1e-1 1e+0 1e+1 5e+1 ifm(a) tj=125c tj=25c vfm(v) fig. 9: forward voltage drop versus forward current (maximum values). 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 1e-2 1e-1 1e+0 zth(j-a) (c/w) tp(s) d = 0.1 d = 0.2 d = 0.5 single pulse t d =tp/t tp fig. 10: relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout). 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 trr(ns) vr=400v tj=125c if=2*if(av) if=if(av) dif/dt(a/s) fig. 12: reverse recovery time versus dif/dt (90% confidence). 0 50 100 150 200 0 1 2 3 4 5 6 7 8 9 10 irm(a) vr=400v tj=125c if=2*if(av) if=if(av) dif/dt(a/s) fig. 11: peak reverse recovery current versus dif/dt (90% confidence). 25 50 75 100 125 0.7 0.8 0.9 1.0 1.1 irm s factor tj(c) fig. 14: relative variation of dynamic parameters versus junction temperature (reference tj=125c). 0 20 40 60 80 100 120 140 160 180 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 s factor if<2*if(av) vr=400v tj=125c dif/dt(a/s) fig. 13: softness factor (tb/ta) versus dif/dt (typical values). STTA206S 6/8
0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 tfr(ns) if=if(av) vfr=1.1*vfmax tj=125c dif/dt(a/s) fig. 16: forward recovery time versus dif/dt (90% confidence). 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16 18 20 22 vfp(v) if=if(av) tj=125c dif/dt(a/s) fig. 15: transient peak forward voltage versus dif/dt (90% confidence). 1 10 100 200 1 2 5 10 vr(v) c(pf) f=1mhz fig. 17: junction capacitance versus reverse voltage applied (typical values). STTA206S 7/8
package mechanical data smc e c l e2 e1 d a1 a2 b ref. dimensions millimeters inches min. max. min. max. a1 1.90 2.45 0.075 0.096 a2 0.05 0.20 0.002 0.008 b 2.90 3.2 0.114 0.126 c 0.15 0.41 0.006 0.016 e 7.75 8.15 0.305 0.321 e1 6.60 7.15 0.260 0.281 e2 4.40 4.70 0.173 0.185 d 5.55 6.25 0.218 0.246 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com 2.0 4.2 2.0 3.3 footprint dimensions (in millimeters) type marking package weight base qty delivery mode STTA206S t51 smc 0.243g 2500 tape & reel band indicates cathode epoxy meets ul94, v0 STTA206S 8/8
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